BCR108E6327HTSA1
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- Mfr.Part #
- BCR108E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 0.2W SOT23-3
- Stock
- 944,301
- In Stock ：
- 944,301
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Pre-Biased
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Polarity :
- NPN
- Number of Pins :
- 3
- Resistor - Base (R1) :
- 2.2 k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 5mA 5V
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Min Operating Temperature :
- -65°C
- Radiation Hardening :
- No
- Halogen Free :
- Not Halogen Free
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 50V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Published :
- 2007
- Base Part Number :
- BCR108
- Lead Free :
- Lead Free
- hFE Min :
- 70
- Current Rating :
- 100mA
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Factory Lead Time :
- 26 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 170MHz
- Transition Frequency :
- 170MHz
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BCR108E6327HTSA1
BCR108E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Infineon Technologies stock available at
BCR108E6327HTSA1 Description
The BCR108E6327HTSA1 is an NPN Silicon Digital Transistor built-in bias resistor (R1=2.2 kΩ, R2=47 kΩ).
BCR108E6327HTSA1 Features
-
Built-in bias resistor (R1=2.2 kΩ, R2=47 kΩ)
-
BCR108S: Two internally isolated transistors with good matching in one multichip package
-
BCR108S: For orientation in reel see package information below
-
Pb-free (RoHS compliant) package
-
Qualified according to AEC Q101
BCR108E6327HTSA1 Applications
-
Switching circuit
-
Inverter
-
Interface circuit
-
Driver circuit
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