BCR108WE6327
- Mfr.Part #
- BCR108WE6327
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- BIPOLAR DIGITAL TRANSISTOR
- Stock
- 13,581
- In Stock :
- 13,581
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Terminal Finish :
- MATTE TIN
- hFE Min :
- 70
- Packaging :
- Tape and Reel
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Voltage Rating (DC) :
- -50 V
- Polarity/Channel Type :
- NPN
- Max Operating Temperature :
- 150 °C
- Transistor Type :
- NPN - Pre-Biased
- Package / Case :
- SC-70, SOT-323
- Package :
- Bulk
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- Product Status :
- Active
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50 V
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Number of Terminals :
- 3
- Collector Emitter Breakdown Voltage :
- 50 V
- Current - Collector (Ic) (Max) :
- 100 mA
- Resistor - Base (R1) :
- 2.2 kOhms
- Collector-Emitter Voltage-Max :
- 50 V
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Continuous Collector Current :
- 100
- DC Current Gain-Min (hFE) :
- 70
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 5mA, 5V
- Supplier Device Package :
- PG-SOT323-3-1
- Max Power Dissipation :
- 250 mW
- Manufacturer :
- Rochester Electronics LLC
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 21.3636
- Power - Max :
- 250 mW
- Max Collector Current :
- 100 mA
- Polarity :
- NPN
- Qualification Status :
- COMMERCIAL
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Transistor Application :
- SWITCHING
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Current Rating :
- -100 mA
- Collector Current-Max (IC) :
- 0.1 A
- RoHS :
- Compliant
- Min Operating Temperature :
- -65 °C
- JESD-30 Code :
- R-PDSO-G3
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 170 MHz
- Transistor Element Material :
- SILICON
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Transition Frequency :
- 170 MHz
- Datasheets
- BCR108WE6327

BCR108WE6327 datasheet pdf and Discrete Semiconductor Products product details from Infineon stock available at
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