BCR108WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

250 mW

JESD-30 Code :

R-PDSO-G3

Manufacturer :

Rochester Electronics LLC

Max Collector Current :

100 mA

Number of Pins :

3

hFE Min :

70

Terminal Form :

Gull wing

Voltage Rating (DC) :

-50 V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Supplier Device Package :

PG-SOT323-3-1

Collector Current-Max (IC) :

0.1 A

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Application :

SWITCHING

Min Operating Temperature :

-65 °C

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Max Operating Temperature :

150 °C

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA (ICBO)

Current Rating :

-100 mA

RoHS :

Compliant

Transition Frequency :

170 MHz

Lead Free :

Lead Free

Current - Collector (Ic) (Max) :

100 mA

DC Current Gain-Min (hFE) :

70

Resistor - Emitter Base (R2) :

47 kOhms

Frequency - Transition :

170 MHz

Package / Case :

SC-70, SOT-323

Collector Emitter Breakdown Voltage :

50 V

Number of Terminals :

3

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Terminal Finish :

MATTE TIN

Voltage - Collector Emitter Breakdown (Max) :

50 V

Package :

Bulk

Transistor Type :

NPN - Pre-Biased

Packaging :

Tape and Reel

Collector-Emitter Voltage-Max :

50 V

Element Configuration :

Single

Series :

Automotive, AEC-Q101

Resistor - Base (R1) :

2.2 kOhms

Product Status :

Active

Collector Emitter Voltage (VCEO) :

50 V

Polarity :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Power - Max :

250 mW

Surface Mount :

yes

Reach Compliance Code :

Unknown

Terminal Position :

Dual

Continuous Collector Current :

100

Qualification Status :

COMMERCIAL