BCR108WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package :

Bulk

Supplier Device Package :

PG-SOT323-3-1

Current - Collector Cutoff (Max) :

100nA (ICBO)

Collector-Emitter Voltage-Max :

50 V

JESD-30 Code :

R-PDSO-G3

Max Collector Current :

100 mA

Continuous Collector Current :

100

Collector Current-Max (IC) :

0.1 A

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

100 mA

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50 V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

COMMERCIAL

Lead Free :

Lead Free

Max Power Dissipation :

250 mW

Resistor - Emitter Base (R2) :

47 kOhms

Package Shape :

RECTANGULAR

DC Current Gain-Min (hFE) :

70

Number of Terminals :

3

Product Status :

Active

Voltage - Collector Emitter Breakdown (Max) :

50 V

Packaging :

Tape and Reel

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Element Configuration :

Single

Series :

Automotive, AEC-Q101

Transition Frequency :

170 MHz

Resistor - Base (R1) :

2.2 kOhms

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Number of Elements :

1

Package / Case :

SC-70, SOT-323

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Frequency - Transition :

170 MHz

Number of Pins :

3

Manufacturer :

Rochester Electronics LLC

Current Rating :

-100 mA

Collector Emitter Voltage (VCEO) :

50 V

hFE Min :

70

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Application :

SWITCHING

Max Operating Temperature :

150 °C

Transistor Type :

NPN - Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Power - Max :

250 mW

RoHS :

Compliant

Polarity :

NPN

Min Operating Temperature :

-65 °C

Surface Mount :

yes

Voltage Rating (DC) :

-50 V

Pbfree Code :

yes