BCR108WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Max Operating Temperature :

150 °C

Packaging :

Tape and Reel

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50 V

Transistor Type :

NPN - Pre-Biased

Mount :

Surface Mount

Max Power Dissipation :

250 mW

Current Rating :

-100 mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Package / Case :

SC-70, SOT-323

Element Configuration :

Single

Min Operating Temperature :

-65 °C

Lead Free :

Lead Free

Terminal Position :

Dual

Package :

Bulk

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Series :

Automotive, AEC-Q101

Collector Current-Max (IC) :

0.1 A

Collector Emitter Voltage (VCEO) :

50 V

Qualification Status :

COMMERCIAL

Frequency - Transition :

170 MHz

Number of Terminals :

3

Number of Pins :

3

hFE Min :

70

Polarity/Channel Type :

NPN

Resistor - Base (R1) :

2.2 kOhms

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Voltage Rating (DC) :

-50 V

Reach Compliance Code :

Unknown

DC Current Gain-Min (hFE) :

70

Max Collector Current :

100 mA

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47 kOhms

Transition Frequency :

170 MHz

Number of Elements :

1

Surface Mount :

yes

Supplier Device Package :

PG-SOT323-3-1

Manufacturer :

Rochester Electronics LLC

Collector-Emitter Voltage-Max :

50 V

Current - Collector Cutoff (Max) :

100nA (ICBO)

Voltage - Collector Emitter Breakdown (Max) :

50 V

RoHS :

Compliant

Product Status :

Active

Power - Max :

250 mW

Continuous Collector Current :

100

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

100 mA