BCR108WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

JESD-30 Code :

R-PDSO-G3

Pbfree Code :

yes

Mount :

Surface Mount

Terminal Form :

Gull wing

Max Collector Current :

100 mA

Transistor Type :

NPN - Pre-Biased

Transistor Element Material :

SILICON

Element Configuration :

Single

Collector-Emitter Voltage-Max :

50 V

Voltage Rating (DC) :

-50 V

Terminal Finish :

MATTE TIN

Current Rating :

-100 mA

Supplier Device Package :

PG-SOT323-3-1

Number of Terminals :

3

Packaging :

Tape and Reel

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Min Operating Temperature :

-65 °C

Power - Max :

250 mW

Manufacturer :

Rochester Electronics LLC

Collector Current-Max (IC) :

0.1 A

Frequency - Transition :

170 MHz

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Collector Emitter Voltage (VCEO) :

50 V

Current - Collector Cutoff (Max) :

100nA (ICBO)

Continuous Collector Current :

100

Qualification Status :

COMMERCIAL

Current - Collector (Ic) (Max) :

100 mA

DC Current Gain-Min (hFE) :

70

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Resistor - Emitter Base (R2) :

47 kOhms

Package :

Bulk

hFE Min :

70

Transition Frequency :

170 MHz

Max Operating Temperature :

150 °C

Voltage - Collector Emitter Breakdown (Max) :

50 V

Product Status :

Active

Peak Reflow Temperature (Cel) :

260

Package / Case :

SC-70, SOT-323

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Surface Mount :

yes

Lead Free :

Lead Free

Resistor - Base (R1) :

2.2 kOhms

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

RoHS :

Compliant

Number of Pins :

3

Max Power Dissipation :

250 mW

Collector Emitter Breakdown Voltage :

50 V

Polarity :

NPN