BCR108WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity :

NPN

Max Power Dissipation :

250 mW

Power - Max :

250 mW

Package :

Bulk

Max Operating Temperature :

150 °C

Surface Mount :

yes

Continuous Collector Current :

100

Collector Emitter Voltage (VCEO) :

50 V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

50 V

Current Rating :

-100 mA

Voltage Rating (DC) :

-50 V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

Supplier Device Package :

PG-SOT323-3-1

Resistor - Emitter Base (R2) :

47 kOhms

DC Current Gain-Min (hFE) :

70

Collector-Emitter Voltage-Max :

50 V

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50 V

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transition Frequency :

170 MHz

Current - Collector Cutoff (Max) :

100nA (ICBO)

Series :

Automotive, AEC-Q101

Resistor - Base (R1) :

2.2 kOhms

Package / Case :

SC-70, SOT-323

Packaging :

Tape and Reel

Number of Terminals :

3

Product Status :

Active

Frequency - Transition :

170 MHz

Number of Pins :

3

Transistor Type :

NPN - Pre-Biased

Package Shape :

RECTANGULAR

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC

Element Configuration :

Single

Mounting Type :

Surface Mount

hFE Min :

70

Collector Current-Max (IC) :

0.1 A

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Terminal Position :

Dual

Terminal Form :

Gull wing

Max Collector Current :

100 mA

Min Operating Temperature :

-65 °C

Current - Collector (Ic) (Max) :

100 mA

Reach Compliance Code :

Unknown

RoHS :

Compliant