BCR166WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Package / Case :

SC-70, SOT-323

Power - Max :

250 mW

Transistor Type :

PNP - Pre-Biased

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

MATTE TIN

Resistor - Base (R1) :

4.7 kOhms

Series :

Automotive, AEC-Q101

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Package Shape :

RECTANGULAR

Product Status :

Active

Frequency - Transition :

160 MHz

Terminal Form :

Gull wing

ECCN Code :

EAR99

Manufacturer :

Infineon Technologies AG

Collector-Emitter Voltage-Max :

50 V

Reach Compliance Code :

Compliant

Voltage - Collector Emitter Breakdown (Max) :

50 V

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

100 mA

Package :

Bulk

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Collector Current-Max (IC) :

0.1 A

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Supplier Device Package :

PG-SOT323-3-1

Qualification Status :

Not Qualified

Number of Terminals :

3

Resistor - Emitter Base (R2) :

47 kOhms

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA, 5V

Terminal Position :

Dual

Number of Elements :

1

DC Current Gain-Min (hFE) :

70

Surface Mount :

yes