BCR119SE6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Published :

2007

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Number of Elements :

2

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Base Part Number :

BCR119S

Collector Emitter Voltage (VCEO) :

300mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 5mA 5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

150MHz

Resistor - Base (R1) :

4.7k Ω

Power - Max :

250mW

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G6

Transistor Type :

2 NPN - Pre-Biased (Dual)

Package / Case :

6-VSSOP, SC-88, SOT-363

Frequency - Transition :

150MHz

Max Collector Current :

100mA