BCR112E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

ECCN Code :

EAR99

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Mount :

Surface Mount

Voltage - Rated DC :

50V

Resistor - Emitter Base (R2) :

4.7 k Ω

Length :

2.9mm

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

50V

Current Rating :

100mA

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C

Factory Lead Time :

26 Weeks

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

3

Collector Emitter Saturation Voltage :

300mV

Max Collector Current :

100mA

Element Configuration :

Single

Halogen Free :

Not Halogen Free

hFE Min :

20

Base Part Number :

BCR112

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Power Dissipation :

200mW

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Max Power Dissipation :

200mW

Transition Frequency :

140MHz

Published :

2011

Pbfree Code :

yes

Transistor Type :

NPN - Pre-Biased

Radiation Hardening :

No

Mounting Type :

Surface Mount

Frequency - Transition :

140MHz

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Width :

1.3mm

Number of Pins :

3

Polarity :

NPN

Terminal Position :

Dual

Resistor - Base (R1) :

4.7 k Ω

Height :

1.1mm