BCR10PNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2011

Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Package / Case :

6-VSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Base Part Number :

BCR10PN

Number of Terminations :

6

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

130MHz

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

Height :

800μm

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Saturation Voltage :

300mV

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Halogen Free :

Halogen Free

Resistor - Base (R1) :

10k Ω

Factory Lead Time :

26 Weeks

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

hFE Min :

30

Collector Emitter Voltage (VCEO) :

300mV

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Power Dissipation :

250mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Frequency - Transition :

130MHz

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Min Operating Temperature :

-65°C

Width :

1.25mm

Number of Elements :

2

Polarity :

NPN, PNP