BCP69-25,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 1V

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Base Part Number :

BCP69

Package / Case :

TO-261-4, TO-261AA

Max Power Dissipation :

650mW

Radiation Hardening :

No

Mounting Type :

Surface Mount

Power Dissipation :

1.35W

Collector Base Voltage (VCBO) :

32V

Emitter Base Voltage (VEBO) :

5V

Mount :

Surface Mount

Power - Max :

650mW

Transition Frequency :

40MHz

Collector Emitter Voltage (VCEO) :

20V

Case Connection :

COLLECTOR

Terminal Position :

Dual

Max Breakdown Voltage :

20V

Number of Pins :

4

Gain Bandwidth Product :

140MHz

Collector Emitter Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Pin Count :

4

Number of Elements :

1

Max Collector Current :

2A

Published :

2011

Number of Terminations :

4

JESD-609 Code :

e3

Contact Plating :

Tin

Frequency :

140MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 200mA, 2A

Factory Lead Time :

4 Weeks

Element Configuration :

Single