BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Ambient Temperature Range High :
- 150°C
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Power - Max :
- 1.4W
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 170MHz
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Power Dissipation :
- 650mW
- Height :
- 1.8mm
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Terminal Form :
- Gull wing
- Transition Frequency :
- 40MHz
- Base Part Number :
- BCP68
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 85
- Number of Terminations :
- 4
- Datasheets
- BCP68,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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