BCP68,115
- Mfr.Part #
- BCP68,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA BCP68 POWER BIPOLAR
- Stock
- 320
- In Stock :
- 320
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Power - Max :
- 1.4W
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Surface Mount :
- yes
- Base Part Number :
- BCP68
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Ambient Temperature Range High :
- 150°C
- Gain Bandwidth Product :
- 170MHz
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 32V
- hFE Min :
- 85
- Height :
- 1.8mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-261-4, TO-261AA
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 40MHz
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 650mW
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 600mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Datasheets
- BCP68,115

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP68,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc.
BCP68,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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