BC860B
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- Mfr.Part #
- BC860B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- BC860
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Power Dissipation :
- 250mW
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Published :
- 2005
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC860B
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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