BC860B,235
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- Mfr.Part #
- BC860B,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 56,648
- In Stock ：
- 56,648
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC860
- Published :
- 2005
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Power Dissipation :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Datasheets
- BC860B,235
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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