BC860B,235
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- Mfr.Part #
- BC860B,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC860B - SMALL SIGNAL B
- Stock
- 56,648
- In Stock ：
- 56,648
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC860
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Max Power Dissipation :
- 250mW
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Datasheets
- BC860B,235
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC860B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860B,235 Applications
There are a lot of Nexperia USA Inc.
BC860B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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