BC859CW

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

100MHz

Transition Frequency :

100MHz

Number of Elements :

1

Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Package / Case :

SC-70, SOT-323

Collector Base Voltage (VCBO) :

30V

Published :

2009

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Mount :

Surface Mount

Gain Bandwidth Product :

100MHz

Max Power Dissipation :

200mW

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Collector Emitter Breakdown Voltage :

30V

Current - Collector Cutoff (Max) :

15nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

5pF

Transistor Type :

PNP

Base Part Number :

BC859

Transistor Element Material :

SILICON

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

30V

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing