BC859BW,115
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- Mfr.Part #
- BC859BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC859 - PNP GENERAL PUR
- Stock
- 4,116
- In Stock ：
- 4,116
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Additional Feature :
- LOW NOISE
- Pin Count :
- 3
- Number of Terminations :
- 3
- Base Part Number :
- BC859
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 220
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Collector-Base Capacitance-Max :
- 5pF
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Datasheets
- BC859BW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC859BW,115 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC859BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859BW,115 Applications
There are a lot of Nexperia USA Inc.
BC859BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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