BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Position :
- Dual
- Base Part Number :
- BC859
- Collector Base Voltage (VCBO) :
- -30V
- Transition Frequency :
- 150MHz
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Max Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -250mV
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -30V
- hFE Min :
- 110
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 150MHz
- Current Rating :
- -100mA
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 30mg
- Datasheets
- BC859BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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