BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 310mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- -30V
- Max Collector Current :
- 100mA
- Transition Frequency :
- 150MHz
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Current Rating :
- -100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- hFE Min :
- 110
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 150MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Additional Feature :
- LOW NOISE
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Terminations :
- 3
- Max Power Dissipation :
- 310mW
- Polarity/Channel Type :
- PNP
- Weight :
- 30mg
- Frequency :
- 150MHz
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- -30V
- Number of Elements :
- 1
- Base Part Number :
- BC859
- Datasheets
- BC859BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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