BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -250mV
- Current Rating :
- -100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- hFE Min :
- 110
- Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -30V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Weight :
- 30mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -30V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 310mW
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Frequency :
- 150MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Gain Bandwidth Product :
- 150MHz
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC859
- Additional Feature :
- LOW NOISE
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- BC859BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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