BC858W,115
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- Mfr.Part #
- BC858W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT323
- Stock
- 187,404
- In Stock ：
- 187,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC858
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Collector-Base Capacitance-Max :
- 5pF
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BC858W,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858W,115 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,115 Applications
There are a lot of Nexperia USA Inc.
BC858W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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