BC858CMTF
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- Mfr.Part #
- BC858CMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 34,116
- In Stock ：
- 34,116
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Base Part Number :
- BC858
- Frequency :
- 150MHz
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Height :
- 930μm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Factory Lead Time :
- 17 Weeks
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- -30V
- hFE Min :
- 110
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 310mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -100mA
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Power Dissipation :
- 310mW
- Terminal Form :
- Gull wing
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- BC858CMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC858CMTF Applications
There are a lot of ON Semiconductor
BC858CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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