BC858CLT3
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- Mfr.Part #
- BC858CLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 2,375
- In Stock ：
- 2,375
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -650mV
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- hFE Min :
- 420
- Voltage - Rated DC :
- -30V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Published :
- 2005
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Pin Count :
- 3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- Current Rating :
- -100mA
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Power Dissipation :
- 300mW
- Surface Mount :
- yes
- Height :
- 940μm
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC858CLT3
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT3G Applications
There are a lot of ON Semiconductor
BC858CLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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