BC858CLT1G
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- Mfr.Part #
- BC858CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 28,253
- In Stock ：
- 28,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Power - Max :
- 300mW
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -650mV
- Termination :
- SMD/SMT
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Cut Tape (CT)
- Height :
- 940μm
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 420
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- -100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Published :
- 2005
- Voltage - Rated DC :
- -30V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC858CLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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