BC858CLT1
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- Mfr.Part #
- BC858CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 100MA SOT23
- Stock
- 42,434
- In Stock ：
- 42,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 225mW
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -30V
- Current Rating :
- -100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Width :
- 1.3mm
- Power - Max :
- 300mW
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Published :
- 2005
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Termination :
- SMD/SMT
- Collector Emitter Saturation Voltage :
- -650mV
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- hFE Min :
- 420
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Height :
- 940μm
- Datasheets
- BC858CLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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