BC858BLT3
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- Mfr.Part #
- BC858BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 30V 100MA SOT-23
- Stock
- 2,398
- In Stock ：
- 2,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- -30V
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- hFE Min :
- 220
- Max Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Height :
- 940μm
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- -650mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Published :
- 2005
- Current Rating :
- -100mA
- Length :
- 2.9mm
- Datasheets
- BC858BLT3
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC858BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT3G Applications
There are a lot of ON Semiconductor
BC858BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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