BC858BLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

Height :

940μm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Power - Max :

300mW

Power Dissipation :

225mW

JESD-609 Code :

e3

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

yes

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

-650mV

Terminal Form :

Gull wing

Number of Elements :

1

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

-100mA

Length :

2.9mm

Number of Pins :

3

Published :

2005

Number of Terminations :

3

hFE Min :

220

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Lead Free :

Lead Free

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Contact Plating :

Tin

Max Breakdown Voltage :

30V

Pbfree Code :

yes

Max Power Dissipation :

300mW

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Single

Frequency :

100MHz

Pin Count :

3

Current - Collector Cutoff (Max) :

15nA ICBO

Width :

1.3mm

Voltage - Rated DC :

-30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V