BC858BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Frequency :

100MHz

Number of Elements :

1

Transistor Type :

PNP

Pbfree Code :

yes

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

15nA ICBO

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Gain Bandwidth Product :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Power - Max :

300mW

Max Collector Current :

100mA

Terminal Form :

Gull wing

Width :

1.3mm

Max Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Height :

940μm

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

30V

hFE Min :

220

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Published :

2005

Power Dissipation :

225mW

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

30V

Voltage - Rated DC :

-30V

Length :

2.9mm

Transition Frequency :

100MHz

Number of Pins :

3

Number of Terminations :

3

Collector Emitter Saturation Voltage :

-650mV

Element Configuration :

Single

Surface Mount :

yes