BC858BHZGT116
- Mfr.Part #
- BC858BHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 2,800
- In Stock :
- 2,800
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting :
- Surface Mount
- Operating Temp Range :
- -65C to 150C
- Mounting Style :
- SMD/SMT
- Surface Mount :
- yes
- Package :
- Digi-Reel?
- Rad Hardened :
- No
- Emitter-Base Voltage :
- 5(V)
- Base Product Number :
- BC858
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Subcategory :
- Transistors
- Reach Compliance Code :
- Compliant
- Product Type :
- BJTs - Bipolar Transistors
- Package Type :
- SOT-23
- RoHS :
- Details
- Output Power :
- Not Required(W)
- Continuous Collector Current :
- 100mA
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SST3
- Qualification :
- AEC-Q101
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Power Dissipation :
- 0.35(W)
- DC Current Gain :
- 210@2MA@5V
- Power - Max :
- 200 mW
- Frequency :
- 250(MHz)
- JESD-30 Code :
- R-PDSO-G3
- Number of Elements :
- 1
- Collector-Base Voltage :
- 30(V)
- Current - Collector (Ic) (Max) :
- 100 mA
- DC Current Gain-Min (hFE) :
- 210
- Mounting Type :
- Surface Mount
- Collector Current-Max (IC) :
- 0.1 A
- Series :
- Automotive, AEC-Q101
- Technology :
- Si
- Transistor Polarity :
- PNP
- Configuration :
- Single
- Minimum Operating Temperature :
- -
- Operating Temperature Classification :
- Military
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tape and Reel
- Brand :
- Rohm Semiconductor
- Transistor Element Material :
- SILICON
- Collector Current (DC) :
- 0.1(A)
- Collector-Emitter Voltage-Max :
- 30 V
- Transition Frequency :
- 250MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Terminal Form :
- Gull wing
- Category :
- Bipolar Small Signal
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Not For New Designs
- Product Category :
- Bipolar Transistors - BJT
- Polarity/Channel Type :
- PNP
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Dual
- Reference Standard :
- AEC-Q101
- MSL :
- MSL 1 - Unlimited
- Manufacturer :
- Rohm Semiconductor
- Operating Temperature :
- 150°C (TJ)
- Number of Terminals :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 5V
- ECCN Code :
- EAR99
- Datasheets
- BC858BHZGT116

150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape and Reel Surface Mount
BC858BHZGT116 Overview
In this device, the DC current gain is 210 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.250MHz is present in the transition frequency.Supplier device package SST3 comes with the product.Voltage of maximal collector-emitter is set to 30 V.The device exhibits a collector-emitter breakdown at 30 V.
BC858BHZGT116 Features
the DC current gain for this device is 210 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
the supplier device package of SST3
BC858BHZGT116 Applications
There are a lot of Rohm Semiconductor
BC858BHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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