BC858BHZGT116

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Mfr.Part #
BC858BHZGT116
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SST3
Stock
2,800
In Stock :
2,800

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting :
Surface Mount
Operating Temp Range :
-65C to 150C
Mounting Style :
SMD/SMT
Surface Mount :
yes
Package :
Digi-Reel?
Rad Hardened :
No
Emitter-Base Voltage :
5(V)
Base Product Number :
BC858
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Subcategory :
Transistors
Reach Compliance Code :
Compliant
Product Type :
BJTs - Bipolar Transistors
Package Type :
SOT-23
RoHS :
Details
Output Power :
Not Required(W)
Continuous Collector Current :
100mA
Transistor Application :
AMPLIFIER
Pin Count :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SST3
Qualification :
AEC-Q101
Current - Collector Cutoff (Max) :
100nA (ICBO)
Power Dissipation :
0.35(W)
DC Current Gain :
210@2MA@5V
Power - Max :
200 mW
Frequency :
250(MHz)
JESD-30 Code :
R-PDSO-G3
Number of Elements :
1
Collector-Base Voltage :
30(V)
Current - Collector (Ic) (Max) :
100 mA
DC Current Gain-Min (hFE) :
210
Mounting Type :
Surface Mount
Collector Current-Max (IC) :
0.1 A
Series :
Automotive, AEC-Q101
Technology :
Si
Transistor Polarity :
PNP
Configuration :
Single
Minimum Operating Temperature :
-
Operating Temperature Classification :
Military
Maximum Operating Temperature :
+ 150 C
Packaging :
Tape and Reel
Brand :
Rohm Semiconductor
Transistor Element Material :
SILICON
Collector Current (DC) :
0.1(A)
Collector-Emitter Voltage-Max :
30 V
Transition Frequency :
250MHz
Voltage - Collector Emitter Breakdown (Max) :
30 V
Terminal Form :
Gull wing
Category :
Bipolar Small Signal
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Not For New Designs
Product Category :
Bipolar Transistors - BJT
Polarity/Channel Type :
PNP
Package Shape :
RECTANGULAR
Terminal Position :
Dual
Reference Standard :
AEC-Q101
MSL :
MSL 1 - Unlimited
Manufacturer :
Rohm Semiconductor
Operating Temperature :
150°C (TJ)
Number of Terminals :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 2mA, 5V
ECCN Code :
EAR99
Datasheets
BC858BHZGT116
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor BC858BHZGT116 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:150°C (TJ), BC858BHZGT116 pinout, BC858BHZGT116 datasheet PDF, BC858BHZGT116 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor BC858BHZGT116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BC858BHZGT116


150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape and Reel Surface Mount

BC858BHZGT116 Overview


In this device, the DC current gain is 210 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.250MHz is present in the transition frequency.Supplier device package SST3 comes with the product.Voltage of maximal collector-emitter is set to 30 V.The device exhibits a collector-emitter breakdown at 30 V.

BC858BHZGT116 Features


the DC current gain for this device is 210 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
the supplier device package of SST3


BC858BHZGT116 Applications


There are a lot of Rohm Semiconductor
BC858BHZGT116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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