BC858B,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Max Power Dissipation :

250mW

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Max Collector Current :

100mA

Series :

Automotive, AEC-Q101

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Collector Base Voltage (VCBO) :

30V

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

30V

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Number of Pins :

3

Current - Collector Cutoff (Max) :

15nA ICBO

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

4 Weeks

Frequency :

100MHz

Terminal Position :

Dual

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Contact Plating :

Tin

Terminal Form :

Gull wing

Mount :

Surface Mount

Power Dissipation :

250mW

Pin Count :

3

Base Part Number :

BC858