BC858B,215
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- Mfr.Part #
- BC858B,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC858B - SMALL SIGNAL B
- Stock
- 1,001,360
- In Stock ：
- 1,001,360
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BC858
- VCEsat-Max :
- 0.65 V
- Configuration :
- Single
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 100MHz
- HTS Code :
- 8541.21.00.95
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 250mW
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Datasheets
- BC858B,215
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858B,215 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
BC858B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858B,215 Applications
There are a lot of Nexperia USA Inc.
BC858B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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