BC858AWT1G
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- Mfr.Part #
- BC858AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SC70-3
- Stock
- 3,926
- In Stock ：
- 3,926
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 90
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- -650mV
- Power Dissipation :
- 150mW
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- BC85**W
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 150mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Voltage - Rated DC :
- -30V
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2005
- Datasheets
- BC858AWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor
BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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