BC858AWT1
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- Mfr.Part #
- BC858AWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SC70-3
- Stock
- 4,733
- In Stock ：
- 4,733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -30V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Base Part Number :
- BC85**W
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -650mV
- Number of Elements :
- 1
- Number of Pins :
- 3
- Published :
- 2005
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transistor Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SC-70, SOT-323
- Collector Base Voltage (VCBO) :
- 30V
- hFE Min :
- 90
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- BC858AWT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858AWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858AWT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858AWT1G Applications
There are a lot of ON Semiconductor
BC858AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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