BC858ALT1G
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- Mfr.Part #
- BC858ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 1,833
- In Stock ：
- 1,833
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 125
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- -30V
- Max Power Dissipation :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -650mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Height :
- 1.11mm
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Number of Elements :
- 1
- Length :
- 3.04mm
- Max Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Width :
- 2.64mm
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Surface Mount :
- yes
- Frequency :
- 100MHz
- Datasheets
- BC858ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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