BC858ALT1
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- Mfr.Part #
- BC858ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 178,176
- In Stock ：
- 178,176
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- hFE Min :
- 125
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Published :
- 2005
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Height :
- 1.11mm
- Power Dissipation :
- 300mW
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 225mW
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Voltage - Rated DC :
- -30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.64mm
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -650mV
- Pbfree Code :
- yes
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -100mA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Length :
- 3.04mm
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Datasheets
- BC858ALT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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