BC857W,135
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- Mfr.Part #
- BC857W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857W - SMALL SIGN
- Stock
- 6,909
- In Stock ：
- 6,909
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Collector-Base Capacitance-Max :
- 5pF
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC857
- Package / Case :
- SC-70, SOT-323
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Datasheets
- BC857W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857W,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857W,135 Applications
There are a lot of Nexperia USA Inc.
BC857W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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