BC857W,135
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- Mfr.Part #
- BC857W,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 6,909
- In Stock ：
- 6,909
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 200mW
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector-Base Capacitance-Max :
- 5pF
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BC857
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC857W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857W,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857W,135 Applications
There are a lot of Nexperia USA Inc.
BC857W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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