BC857BQC-QZ
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- Mfr.Part #
- BC857BQC-QZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A DFN1412D-3
- Stock
- 17,857
- In Stock ：
- 17,857
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA, 5V
- Product Status :
- Active
- RoHS :
- Details
- Package :
- Digi-Reel?
- Minimum DC Current Gain :
- 220
- Series :
- Automotive, AEC-Q101, BC857xQC-Q
- Brand :
- Nexperia
- Subcategory :
- Transistors
- Mounting Style :
- SMD/SMT
- Current - Collector (Ic) (Max) :
- 100 mA
- Supplier Device Package :
- DFN1412D-3
- Transistor Type :
- PNP
- Transistor Polarity :
- PNP
- Continuous Collector Current :
- 100mA
- Product Category :
- Bipolar Transistors - BJT
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Elements per Chip :
- 1
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Technology :
- Si
- Power - Max :
- 360 mW
- Packaging :
- MouseReel
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Manufacturer :
- Nexperia
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Surface Mount, Wettable Flank
- Operating Temperature :
- 150°C (TJ)
- Qualification :
- AEC-Q101
- Frequency - Transition :
- 100MHz
- MSL :
- -
- Package / Case :
- 3-XDFN Exposed Pad
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Package Type :
- DFN1412D-3
- Power Dissipation :
- 450mW
- Transition Frequency :
- 100MHz
- Datasheets
- BC857BQC-QZ
PNP 150°C (TJ) 15nA (ICBO) 3-XDFN Exposed Pad MouseReel Surface Mount, Wettable Flank
BC857BQC-QZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.A transition frequency of 100MHz is present in the part.The product comes in the supplier device package of DFN1412D-3.A 45 V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857BQC-QZ Features
the DC current gain for this device is 220 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
the supplier device package of DFN1412D-3
BC857BQC-QZ Applications
There are a lot of Nexperia USA Inc.
BC857BQC-QZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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