BC857BMTF
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- Mfr.Part #
- BC857BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 43,209
- In Stock ：
- 43,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- hFE Min :
- 110
- Collector Base Voltage (VCBO) :
- -50V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 14 hours ago)
- Frequency :
- 150MHz
- Base Part Number :
- BC857
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 150MHz
- Transition Frequency :
- 150MHz
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 45V
- Weight :
- 30mg
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Width :
- 1.3mm
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Published :
- 2004
- Height :
- 970μm
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 310mW
- Length :
- 2.9mm
- Max Power Dissipation :
- 310mW
- Number of Elements :
- 1
- Voltage - Rated DC :
- -45V
- Current Rating :
- -100mA
- Collector Emitter Saturation Voltage :
- -250mV
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Datasheets
- BC857BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC857BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC857BMTF Applications
There are a lot of ON Semiconductor
BC857BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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