BC857BE6327HTSA1
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- Mfr.Part #
- BC857BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 2,193,599
- In Stock ：
- 2,193,599
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Halogen Free :
- Not Halogen Free
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC857
- Max Power Dissipation :
- 330mW
- Current :
- 200mA
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 650mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 1mm
- Frequency :
- 250MHz
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 250MHz
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -45V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 650mV
- ECCN Code :
- EAR99
- Datasheets
- BC857BE6327HTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BE6327HTSA1 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BE6327HTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC857BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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