BC857AW,115
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- Mfr.Part #
- BC857AW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC857AW - SMALL SIGNAL
- Stock
- 372
- In Stock ：
- 372
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector-Base Capacitance-Max :
- 5pF
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC857
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 125
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Datasheets
- BC857AW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC857AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857AW,115 Applications
There are a lot of Nexperia USA Inc.
BC857AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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