BC857AQAZ
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- Mfr.Part #
- BC857AQAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857AQA SMALL SIGN
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Configuration :
- Single
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 280mW
- Max Power Dissipation :
- 280mW
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Reference Standard :
- AEC-Q101; IEC-60134
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-N3
- Max Breakdown Voltage :
- 45V
- Terminal Form :
- NO LEAD
- Package / Case :
- 3-XDFN Exposed Pad
- Datasheets
- BC857AQAZ
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857AQAZ Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857AQAZ Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857AQAZ Applications
There are a lot of Nexperia USA Inc.
BC857AQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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