BC857AM315
- Mfr.Part #
- BC857AM315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857AM - SMALL SIG
- Stock
- 9,598
- In Stock :
- 9,598
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- BC857
- Collector Base Voltage (VCBO) :
- -50V
- Radiation Hardening :
- No
- Power - Max :
- 150mW
- Max Collector Current :
- -100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2008
- Max Junction Temperature (Tj) :
- 150°C
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Max Power Dissipation :
- 430mW
- Number of Elements :
- 1
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -400mV
- Power Dissipation :
- 430mW
- Frequency :
- 100MHz
- Height :
- 500μm
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-101, SOT-883
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 125
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- -45V
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 100mA
- Ambient Temperature Range High :
- 150°C
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC857AM315
Specialized ICs Nexperia BC857AM315 Overview
The Specialized ICs Nexperia BC857AM315 is a high-performance, surface-mount, silicon PNP transistor that offers excellent thermal characteristics with a maximum junction temperature of 150°C. Its low collector-emitter saturation voltage of -400mV ensures efficient operation in high-frequency applications. This component features a DC current gain of 125 at 2mA and 5V, making it ideal for precision amplification tasks. The low leakage current of 15nA, combined with a transition frequency of 100MHz, provides a robust solution for a wide range of electronic circuits. Designed in the compact SC-101, SOT-883 package, it is suitable for automated assembly processes, provided on Tape & Reel (TR) to facilitate bulk handling and manufacturing.
Specialized ICs Nexperia BC857AM315 Key Features
DC current gain: 125 @ 2mA 5V
Collector-emitter saturation voltage: -400mV
VCE saturation (Max): 400mV @ 5mA, 100mA
Emitter-base voltage: -5V
Transition frequency: 100MHz
Specialized ICs Nexperia BC857AM315 Applications
The Specialized ICs Nexperia BC857AM315 is versatile in various applications, including:
- Inverter
- Interface
- Driver
- Muting
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