BC856W,135
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- Mfr.Part #
- BC856W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC856W - SMALL SIGN
- Stock
- 139,766
- In Stock ：
- 139,766
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Collector Current :
- 100mA
- Base Part Number :
- BC856
- Transistor Type :
- PNP
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector-Base Capacitance-Max :
- 5pF
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Datasheets
- BC856W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856W,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,135 Applications
There are a lot of Nexperia USA Inc.
BC856W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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