BC856BQB-QZ

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Mfr.Part #
BC856BQB-QZ
Manufacturer
Nexperia
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR IN DFN PACK
Stock
84,950
In Stock :
84,950

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
100MHz
Manufacturer :
Nexperia
Power - Max :
340 mW
Series :
Automotive, AEC-Q101
Brand :
Nexperia
Product Category :
Bipolar Transistors - BJT
Package / Case :
3-XDFN Exposed Pad
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Qualification :
AEC-Q101
Configuration :
Single
Technology :
Si
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA, 5V
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Operating Temperature :
150°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
65 V
Current - Collector (Ic) (Max) :
100 mA
Mounting Type :
Surface Mount, Wettable Flank
Product Type :
BJTs - Bipolar Transistors
Subcategory :
Transistors
Mounting Style :
SMD/SMT
Package :
Tape and Reel (TR)
Continuous Collector Current :
- 100 mA
Supplier Device Package :
DFN1110D-3
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
15nA (ICBO)
Transistor Polarity :
PNP
Packaging :
MouseReel
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Datasheets
BC856BQB-QZ
Introducing Transistors - Bipolar (BJT) - Single Nexperia BC856BQB-QZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-XDFN Exposed Pad, Operating Temperature:150°C (TJ), Mounting Type:Surface Mount, Wettable Flank, BC856BQB-QZ pinout, BC856BQB-QZ datasheet PDF, BC856BQB-QZ amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BC856BQB-QZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BC856BQB-QZ


PNP 150°C (TJ) 15nA (ICBO) 3-XDFN Exposed Pad MouseReel Surface Mount, Wettable Flank

BC856BQB-QZ Overview


In this device, the DC current gain is 220 @ 2mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.A - 100 mA continuous collector voltage is necessary to achieve high efficiency.Product comes in the supplier's device package DFN1110D-3.There is a 65 V maximal voltage in the device due to collector-emitter breakdown.

BC856BQB-QZ Features


the DC current gain for this device is 220 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of DFN1110D-3


BC856BQB-QZ Applications


There are a lot of Nexperia USA Inc.
BC856BQB-QZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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