BC856BM3T5G
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- Mfr.Part #
- BC856BM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT723
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Halogen Free :
- Halogen Free
- Transistor Type :
- PNP
- Power - Max :
- 265mW
- Width :
- 850μm
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Max Power Dissipation :
- 265mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Height :
- 550μm
- Collector Emitter Voltage (VCEO) :
- 65V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Base Part Number :
- BC856BM
- Collector Emitter Breakdown Voltage :
- 65V
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 640mW
- Package / Case :
- SOT-723
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 1.25mm
- hFE Min :
- 150
- Voltage - Rated DC :
- -65V
- Number of Elements :
- 1
- Published :
- 2006
- Terminal Form :
- Flat
- Collector Emitter Saturation Voltage :
- -650mV
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Datasheets
- BC856BM3T5G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
BC856BM3T5G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).100MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC856BM3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BM3T5G Applications
There are a lot of ON Semiconductor
BC856BM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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