BC856BLT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Voltage - Rated DC :

-65V

Current Rating :

-100mA

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

65V

Number of Elements :

1

Terminal Position :

Dual

Length :

2.9mm

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

65V

Contact Plating :

Tin

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-650mV

Lead Free :

Lead Free

hFE Min :

220

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Gain Bandwidth Product :

100MHz

Mounting Type :

Surface Mount

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Frequency :

100MHz

Width :

1.3mm

Pbfree Code :

yes

REACH SVHC :

No SVHC

Element Configuration :

Single

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100mA

Number of Terminations :

3

Collector Base Voltage (VCBO) :

80V

Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pin Count :

3

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Voltage (VCEO) :

65V

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Height :

940μm

Radiation Hardening :

No

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks