BC856BLT3

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Collector Base Voltage (VCBO) :

80V

Max Collector Current :

100mA

Pin Count :

3

Gain Bandwidth Product :

100MHz

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Width :

1.3mm

Number of Pins :

3

Length :

2.9mm

Element Configuration :

Single

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

65V

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-650mV

REACH SVHC :

No SVHC

hFE Min :

220

Number of Terminations :

3

Max Breakdown Voltage :

65V

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

15nA ICBO

Contact Plating :

Tin

Number of Elements :

1

Current Rating :

-100mA

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-65V

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

65V

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Frequency :

100MHz

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transition Frequency :

100MHz

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Height :

940μm

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ