BC856BLT1
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- Mfr.Part #
- BC856BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 100MA SOT23
- Stock
- 29,672
- In Stock ：
- 29,672
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Packaging :
- Cut Tape (CT)
- Frequency :
- 100MHz
- Voltage - Rated DC :
- -65V
- Published :
- 2005
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- hFE Min :
- 220
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- -650mV
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 300mW
- Current Rating :
- -100mA
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Width :
- 1.3mm
- Number of Elements :
- 1
- Surface Mount :
- yes
- Height :
- 940μm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Breakdown Voltage :
- 65V
- Datasheets
- BC856BLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BLT1G Applications
There are a lot of ON Semiconductor
BC856BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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