BC856BE6327
- Mfr.Part #
- BC856BE6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- BIPOLAR GEN PURPOSE TRANSISTOR
- Stock
- 27,639
- In Stock :
- 27,639
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PDSO-G3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 100mA
- Transition Frequency :
- 250MHz
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Base Part Number :
- BC856
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power - Max :
- 330mW
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 0.33W
- Frequency - Transition :
- 250MHz
- Surface Mount :
- yes
- RoHS Status :
- RoHS Compliant
- Published :
- 2011
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Polarity/Channel Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 65V
- Datasheets
- BC856BE6327

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC 856B E6327 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 65V maximal voltage in the device due to collector-emitter breakdown.
BC 856B E6327 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
BC 856B E6327 Applications
There are a lot of Infineon Technologies
BC 856B E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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