BC856BE6327

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Mfr.Part #
BC856BE6327
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
BIPOLAR GEN PURPOSE TRANSISTOR
Stock
27,639
In Stock :
27,639

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PDSO-G3
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
Dual
Current - Collector (Ic) (Max) :
100mA
Transition Frequency :
250MHz
Terminal Finish :
Matte Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Base Part Number :
BC856
Number of Elements :
1
Current - Collector Cutoff (Max) :
15nA ICBO
Qualification Status :
Not Qualified
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Power - Max :
330mW
Peak Reflow Temperature (Cel) :
260
Transistor Type :
PNP
Configuration :
Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
Number of Terminations :
3
Power Dissipation-Max (Abs) :
0.33W
Frequency - Transition :
250MHz
Surface Mount :
yes
RoHS Status :
RoHS Compliant
Published :
2011
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Polarity/Channel Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
65V
Datasheets
BC856BE6327
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC856BE6327 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BC856, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, BC856BE6327 pinout, BC856BE6327 datasheet PDF, BC856BE6327 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC856BE6327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC856BE6327


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC 856B E6327 Overview


In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 65V maximal voltage in the device due to collector-emitter breakdown.

BC 856B E6327 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz


BC 856B E6327 Applications


There are a lot of Infineon Technologies
BC 856B E6327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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