BC856B-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

-65V

Pbfree Code :

yes

Number of Elements :

1

Contact Plating :

Tin

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

-100mA

Power Dissipation :

310mW

Element Configuration :

Single

Frequency :

200MHz

Number of Pins :

3

Lead Free :

Lead Free

Pin Count :

3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

15nA

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gain Bandwidth Product :

200MHz

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.4mm

Current - Collector (Ic) (Max) :

100mA

Length :

3.05mm

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Factory Lead Time :

19 Weeks

Collector Base Voltage (VCBO) :

-80V

Operating Temperature :

-65°C~150°C TJ

Transition Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Emitter Base Voltage (VEBO) :

-5V

Published :

2005

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

-250mV

Transistor Element Material :

SILICON

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

-65V

Base Part Number :

BC856B

Weight :

7.994566mg

hFE Min :

220

Termination :

SMD/SMT

Voltage - Collector Emitter Breakdown (Max) :

65V

Terminal Position :

Dual