BC856B-13-F
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- Mfr.Part #
- BC856B-13-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 2,992
- In Stock ：
- 2,992
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC856B
- hFE Min :
- 220
- Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Frequency :
- 200MHz
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 65V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 65V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15μA ICBO
- Power - Max :
- 310mW
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -650mV
- Gain Bandwidth Product :
- 200MHz
- Published :
- 2005
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Transition Frequency :
- 200MHz
- Continuous Collector Current :
- -100mA
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Datasheets
- BC856B-13-F
PNP -65°C~150°C TJ 15μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856B-13-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856B-13-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BC856B-13-F Applications
There are a lot of Diodes Incorporated
BC856B-13-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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