BC856AW,135
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- Mfr.Part #
- BC856AW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 18,296
- In Stock ：
- 18,296
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 5pF
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 65V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC856
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200mW
- Frequency :
- 100MHz
- Datasheets
- BC856AW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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